Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si


Okyay A. K., Nayfeh A. M., Saraswat K. C., ÖZGÜVEN TAYFUN N., Marshall A., McIntyre P. C., ...More

19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Montreal, Canada, 29 October - 02 November 2006, pp.460-461, (Full Text)

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/leos.2006.279214
  • City: Montreal
  • Country: Canada
  • Page Numbers: pp.460-461
  • Dokuz Eylül University Affiliated: No

Abstract

Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm(2) and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by similar to 12meV, resulting in a similar to 20nm red shift at the absorption edge.