Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si
19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Montreal, Canada, 29 October - 02 November 2006, pp.460-461, (Full Text)
- Publication Type: Conference Paper / Full Text
- Doi Number: 10.1109/leos.2006.279214
- City: Montreal
- Country: Canada
- Page Numbers: pp.460-461
- Dokuz Eylül University Affiliated: No
Abstract
Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm(2) and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by similar to 12meV, resulting in a similar to 20nm red shift at the absorption edge.