Strain enhanced high efficiency germanium photodetectors in the near infrared for integration with Si

Okyay A. K., Nayfeh A. M., Saraswat K. C., ÖZGÜVEN TAYFUN N., Marshall A., McIntyre P. C., ...Daha Fazla

19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Montreal, Kanada, 29 Ekim - 02 Kasım 2006, ss.460-461, (Tam Metin Bildiri)

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/leos.2006.279214
  • Basıldığı Şehir: Montreal
  • Basıldığı Ülke: Kanada
  • Sayfa Sayıları: ss.460-461
  • Dokuz Eylül Üniversitesi Adresli: Hayır

Özet

Germanium-on-silicon photodetectors with responsivities as high as 0.85A/W at 1550nm that exhibit dark currents of 100mA/cm(2) and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by similar to 12meV, resulting in a similar to 20nm red shift at the absorption edge.