Effects of applied electromagnetic fields on the optical transitions in a V-shaped quantum well

Yesilgul U., Ungan F., Sakiroglu S., Kasapoglu E., Sari H., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.58, pp.87-93, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 58
  • Publication Date: 2013
  • Doi Number: 10.1016/j.spmi.2013.03.008
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.87-93
  • Keywords: V-shaped quantum well, Exciton binding energy, Interband absorption, EXCITON BINDING-ENERGY, APPLIED ELECTRIC-FIELD, MAGNETIC-FIELD, ABSORPTION-SPECTRA, WIRES, IMPURITY, SINGLE, STATES
  • Dokuz Eylül University Affiliated: Yes

Abstract

In this study, the interband optical transitions and the binding energy of an exciton in a GaAs/Ga1-xAlxAs V-shaped quantum well (VQW) under the electric and magnetic fields are calculated. The calculations were performed within the effective mass approximation, using a variational method. It has been observed that the electric and magnetic fields provide an important effect on the electronic and optical properties in the VQW and the changes in the binding energy depend on the shape of the confinement potential. (C) 2013 Elsevier Ltd. All rights reserved.