Akademik Veri Yönetim Sistemi
International Conference on Production Research - Regional Conference Africa, Europe and the Middle East (ICPR-AEM) / 3rd International Conference on Quality and Innovation in Engineering and Management (QIEM), Cluj-Napoca, Romanya, 1 - 05 Temmuz 2014, ss.170-177
With the aim to utilize capacitor applications, synthesis, characterization and electrical properties of pyrochlore-free Dy doped Pb(Mg1/3Nb2/3)O-3 (PMN) nano scale powders and PMN thin films on n-type Si substrates using sol-gel technique. In this context, transparent solutions were prepared from Dy, Pb, Mg and Nb based precursors, methyl alcohol and glacial acetic acid (GAA). Thermal, structural, microstructural, optical and electrical properties of the powder and the coatings were characterized through differential thermal analysis-thermogravimetry (DTA-TG), Fourier transform infrared (FTIR), X-ray diffraction (XRD), scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), atomic force microscopy (AFM). Dy doped PMN films with giant dielectric constant responses were fabricated using the powder prepared from the precursor suspension method. It was found that the forward current of the coatings increases exponentially with applied voltage like diode at low voltages. The device indicates a rectifying behavior between PMN and Dy doped PMN on Si semiconductor substrates. The nanoscaled thin films of Dy doped PMN/n-Si junctions behave like a Schottky barrier diodes at low voltages. It was found that Dy(+3) addition is decreased the resistance value and makes the capacitor more conductive.