Quantum-Transport Characteristics of a p–n Junction on Single-Layer TiS3

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Iyikanat F., Senger R. T., Peeters F. M., Sahin H.

ChemPhysChem, vol.17, no.23, pp.3985-3991, 2016 (SCI-Expanded, Scopus) identifier identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 17 Issue: 23
  • Publication Date: 2016
  • Doi Number: 10.1002/cphc.201600751
  • Journal Name: ChemPhysChem
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.3985-3991
  • Keywords: ab initio calculations, doping, electron transfer, monolayers, p-n junctions
  • Open Archive Collection: AVESIS Open Access Collection
  • Dokuz Eylül University Affiliated: No

Abstract

By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.