Quantum-Transport Characteristics of a p–n Junction on Single-Layer TiS3
ChemPhysChem, vol.17, no.23, pp.3985-3991, 2016 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 17 Issue: 23
- Publication Date: 2016
- Doi Number: 10.1002/cphc.201600751
- Journal Name: ChemPhysChem
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.3985-3991
- Keywords: ab initio calculations, doping, electron transfer, monolayers, p-n junctions
- Open Archive Collection: AVESIS Open Access Collection
- Dokuz Eylül University Affiliated: No
Abstract
By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.