Quantum-Transport Characteristics of a p–n Junction on Single-Layer TiS3

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Iyikanat F., Senger R. T., Peeters F. M., Sahin H.

ChemPhysChem, cilt.17, sa.23, ss.3985-3991, 2016 (SCI-Expanded) identifier identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 17 Sayı: 23
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1002/cphc.201600751
  • Dergi Adı: ChemPhysChem
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3985-3991
  • Anahtar Kelimeler: ab initio calculations, doping, electron transfer, monolayers, p-n junctions
  • Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
  • Dokuz Eylül Üniversitesi Adresli: Hayır

Özet

By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.