Intersubband optical absorption in quantum wells under applied electric and intense laser fields


ÖZTÜRK E., Sari H., Sokmen I.

SURFACE REVIEW AND LETTERS, vol.11, no.3, pp.297-303, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 3
  • Publication Date: 2004
  • Doi Number: 10.1142/s0218625x04006219
  • Journal Name: SURFACE REVIEW AND LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.297-303
  • Keywords: quantum wells, optical transitions, electric field, intense laser field, DELTA-DOPED GAAS, INFRARED DETECTOR, DONOR IMPURITIES, SEMICONDUCTORS, HETEROSTRUCTURES, SUPERLATTICE, TRANSITIONS, RADIATION, EXCITONS, ENERGY
  • Dokuz Eylül University Affiliated: No

Abstract

Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained show that intersubband optical transition and energy levels in quantum wells can significantly be modified and controlled by the electric field and intense laser field. Generally there is a distinct feature for the case of the intersubband absorption compared with intersubband optical absorption in a quantum well with an applied electric field.