Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well


Turkoglu A., Amca R., Ergun Y., Sokmen I., Balkan N.

SUPERLATTICES AND MICROSTRUCTURES, vol.33, no.4, pp.235-245, 2003 (SCI-Expanded) identifier identifier

Abstract

We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field strength but also decreases depending on the magnetic length. We have observed oscillatory behavior of the density of carriers due to the in-plane magnetic field. (C) 2003 Elsevier Ltd. All rights reserved.