Atıf İçin Kopyala
YEŞİLGÜL Ü., UNGAN F., ŞAKİROĞLU S., Duque C., Mora-Ramos M., KASAPOĞLU E., ...Daha Fazla
NANOSCALE RESEARCH LETTERS, cilt.7, 2012 (SCI-Expanded)
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Yayın Türü:
Makale / Derleme
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Cilt numarası:
7
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Basım Tarihi:
2012
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Doi Numarası:
10.1186/1556-276x-7-586
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Dergi Adı:
NANOSCALE RESEARCH LETTERS
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Derginin Tarandığı İndeksler:
Science Citation Index Expanded (SCI-EXPANDED), Scopus
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Anahtar Kelimeler:
Impurities, Quantum well, Dilute nitride, MOLECULAR-BEAM EPITAXY, HYDROSTATIC-PRESSURE, OPTICAL-PROPERTIES, BAND PARAMETERS, GAINNAS ALLOYS, ELECTRIC-FIELD, STATES, PHOTOIONIZATION, SINGLE, DOT
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Dokuz Eylül Üniversitesi Adresli:
Evet
Özet
Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.