The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well
NANOSCALE RESEARCH LETTERS, vol.7, 2012 (SCI-Expanded, Scopus)
- Publication Type: Article / Review
- Volume: 7
- Publication Date: 2012
- Doi Number: 10.1186/1556-276x-7-586
- Journal Name: NANOSCALE RESEARCH LETTERS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Keywords: Impurities, Quantum well, Dilute nitride
- Open Archive Collection: AVESIS Open Access Collection
- Dokuz Eylül University Affiliated: Yes
Abstract
Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.