Shallow donor impurities in different shaped double quantum wells under the electric field

Kasapoglu E., Sokmen I.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol.241, no.5, pp.1066-1072, 2004 (SCI-Expanded) identifier identifier


The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells under the electric field is calculated by using a variational approach. The results have been obtained in the presence electric field applied along the growth direction as a function of the impurity position, barrier width and the geometric shape of the double quantum wells. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.