Production and Characterizations of Sol-Gel-Derived Li, Cu:NiO<i><sub>x</sub></i> Particles: An Investigation on the Effects of Li and Cu Incorporation

Uzunbayır B., Akalın S. A., Yıldırım S., Erol M., Oğuzlar S.

JOURNAL OF ELECTRONIC MATERIALS, sa.8, ss.5534-5542, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s11664-023-10500-z
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.5534-5542
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

Nickel oxide, a p-type semiconductor material with a large band gap (similar to 3.6-4.0 eV), has gained interest from researchers due to its recent and widespread uses. In this work, pristine and doped (Li and Li, Cu) NiOx particles were obtained by the sol-gel method with different fractions (Li: 0.05; Cu: 0.00, 0.05, 0.1, 0.15, 0.30). Phase structures, functional groups, elemental analyses, and optical properties were investigated by x-ray diffractometer (XRD), Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy (XPS), and photoluminescence measurements, respectively. The XPS and XRD results indicated that Li+ and Cu2+ incorporation into NiOx structure was successfully achieved and the crystallite size decreased owing to Li+ and Cu2+ addition. The particles were excited at 362 nm and exhibited a peak at 550 nm as a maximum emission peak with bi-exponential decay curves. With the Li+ and Cu2+ incorporation into the structure, both emission-based intensity and average decay time values decreased.