Microscopic theory of the activated behavior of the quantized Hall effect

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Sakiroglu S., Erkarslan U., Oylumluoglu G., Siddiki A., Sokmen I.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.42, sa.4, ss.1054-1057, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Sayı: 4
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.physe.2009.11.053
  • Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1054-1057
  • Anahtar Kelimeler: Quantized Hall effect, Thermally activated conduction, Longitudinal resistance, TEMPERATURE-DEPENDENCE, QUANTUM, RESISTANCE, REGIME
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

The thermally activated behavior of the gate defined narrow Hall bars is studied by analyzing the existence of the incompressible strips within a Hartree-type approximation. We perform self-consistent calculations considering the linear response regime, supported by a local conductivity model. We investigate the variation of the activation energy depending on the width of samples in the range of 2d similar to[1-10]mu m. We show that the largest activation energy of high-mobility narrow samples, is at the low field edge of Hall filling factor 2 plateau (exceeding half of the cyclotron energy), whereas for relatively wide samples the higher activation energy is obtained at the high field edge of Hall plateau. In contrast to the single-particle theories based on the localization of electronic states, we found that the activation energy is almost independent of the properties of the density of states.