THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD

Yesilgul U., Ungan F., Kasapoglu E., Sari H., Sokmen I.

MODERN PHYSICS LETTERS B, vol.25, no.32, pp.2451-2459, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 25 Issue: 32
  • Publication Date: 2011
  • Doi Number: 10.1142/s0217984911027467
  • Journal Name: MODERN PHYSICS LETTERS B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2451-2459
  • Keywords: Quantum well, impurity binding energy, intersubband transitions, APPLIED ELECTRIC-FIELD, MOLECULAR-BEAM-EPITAXY, SEMICONDUCTOR, STATES, WIRES, ABSORPTION, EXCITONS, DENSITY, HETEROSTRUCTURES, FABRICATION
  • Dokuz Eylül University Affiliated: Yes

Abstract

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.