Atıf İçin Kopyala
Yesilgul U., Ungan F., Kasapoglu E., Sari H., Sokmen I.
MODERN PHYSICS LETTERS B, cilt.25, sa.32, ss.2451-2459, 2011 (SCI-Expanded)
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Yayın Türü:
Makale / Tam Makale
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Cilt numarası:
25
Sayı:
32
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Basım Tarihi:
2011
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Doi Numarası:
10.1142/s0217984911027467
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Dergi Adı:
MODERN PHYSICS LETTERS B
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Derginin Tarandığı İndeksler:
Science Citation Index Expanded (SCI-EXPANDED), Scopus
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Sayfa Sayıları:
ss.2451-2459
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Anahtar Kelimeler:
Quantum well, impurity binding energy, intersubband transitions, APPLIED ELECTRIC-FIELD, MOLECULAR-BEAM-EPITAXY, SEMICONDUCTOR, STATES, WIRES, ABSORPTION, EXCITONS, DENSITY, HETEROSTRUCTURES, FABRICATION
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Dokuz Eylül Üniversitesi Adresli:
Evet
Özet
The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.