Akademik Veri Yönetim Sistemi
IEEE TRANSACTIONS ON POWER ELECTRONICS, cilt.30, sa.9, ss.5058-5066, 2015 (SCI-Expanded)
In this paper, a new analytical model introduced extracting from datasheet of a MOSFET and developed a MATLAB code for simulating a MOSFET driver circuit is proposed in the literature to observe the ringings of its output for capacitively loaded case. The output waveform is studied only for high-to-low transition. Gate drive resistance, wiring parasitics of the printed circuit board layout, and the characteristic properties of the MOSFET affect both the delay time of the MOSFET to become ON and performance of the driver circuit. Also, voltage stress of the MOSFET and therefore safe operating range for the circuit all depend on these effects. These effects are all considered in the design stage. The simulation results obtained from CST Design Studio software are compared with the results of experimental work. The analytical modeling results solved in the MATLAB are found congruent with the simulation results and experimental results as well. The simulation work showed that developed MATLAB code along with extracted models from datasheets has less convergence problems and also requires less simulation time.