Effect of carrier concentration dependant mobility on the performance of high electron mobility transistors

EROL M.

Turkish Journal of Physics, cilt.25, sa.2, ss.137-142, 2001 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 25 Sayı: 2
  • Basım Tarihi: 2001
  • Dergi Adı: Turkish Journal of Physics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.137-142
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes into account both the drift and diffusion part of the overall drain current. The normalized drain current and normalized transconductance are found to be greatly affected by the carrier concentration dependant mobility.