Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.41, no.3, pp.195-200, 2008 (SCI-Expanded, Scopus)
- Publication Type: Article / Review
- Volume: 41 Issue: 3
- Publication Date: 2008
- Doi Number: 10.1051/epjap:2008018
- Journal Name: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.195-200
- Dokuz Eylül University Affiliated: Yes
Abstract
For a uniform distribution we have theoretically studied the subband structure of p-type delta-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the delta-doping concentration and the layer thickness. The electronic properties such as the depth of con. ning potential, the density pro. le, the Fermi level, the subband energies and the subband populations have been calculated by solving the Schrodinger and Poisson equations self consistently. In this study, we have seen that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.