The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well

Kasapoglu E., Sari H., Sokmen I.

SURFACE REVIEW AND LETTERS, vol.12, no.2, pp.155-159, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 12 Issue: 2
  • Publication Date: 2005
  • Doi Number: 10.1142/s0218625x05006871
  • Journal Name: SURFACE REVIEW AND LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.155-159
  • Keywords: graded quantum well, hydrostatic pressure, ENERGY, STATES, GAAS, PARAMETERS, DEPENDENCE
  • Dokuz Eylül University Affiliated: No

Abstract

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.