Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers
SUPERLATTICES AND MICROSTRUCTURES, vol.46, no.3, pp.507-512, 2009 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 46 Issue: 3
- Publication Date: 2009
- Doi Number: 10.1016/j.spmi.2009.04.012
- Journal Name: SUPERLATTICES AND MICROSTRUCTURES
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.507-512
- Keywords: Photoionization, Quantum-well wires, Donor impurity
- Dokuz Eylül University Affiliated: Yes
Abstract
Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters. (C) 2009 Elsevier Ltd. All rights reserved.