Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers

Koksal M., Kasapoglu E., Sari H., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.46, no.3, pp.507-512, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 46 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1016/j.spmi.2009.04.012
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.507-512
  • Keywords: Photoionization, Quantum-well wires, Donor impurity, HYDROGENIC IMPURITY, WELL, STATES, FIELD
  • Dokuz Eylül University Affiliated: Yes

Abstract

Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters. (C) 2009 Elsevier Ltd. All rights reserved.