The polarizability and the photoionization cross-section under the external fields for donor impurities in quantum well-wire
International Conference on Superlattices, Nano-Structures and Nano-Devices, İstanbul, Turkey, 30 July - 04 August 2006, vol.4, pp.332-333, (Full Text)
- Publication Type: Conference Paper / Full Text
- Volume: 4
- Doi Number: 10.1002/pssc.200673289
- City: İstanbul
- Country: Turkey
- Page Numbers: pp.332-333
- Dokuz Eylül University Affiliated: Yes
Abstract
In this study, we have calculated the donor impurity binding energy, donor impurity related photoionization cross-section and polarizability in symmetric GaAs/Ga1-xAlxAs quantum well-wire as a function of the impurity positions, dimensions of the structures and external electric and magnetic field, the calculations were performed within the effective mass approximation, using a variational method.