Experimental and Theoretical Investigation of Zr-Doped CuO/Si Solar Cell


Yigit Gezgin S., Baturay Ş., Ozaydin C., KILIÇ H. Ş.

Physica Status Solidi (A) Applications and Materials Science, cilt.221, sa.14, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 221 Sayı: 14
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1002/pssa.202400112
  • Dergi Adı: Physica Status Solidi (A) Applications and Materials Science
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, Compendex, INSPEC
  • Anahtar Kelimeler: capacitance–voltage, current–voltage, SCAPS-1D, Zr-doped CuO
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

Copper oxide (CuO) is a nanostructured semiconductor material with the potential for solar energy conversion and can be suitable for solar cells when used as a thin film. Herein, nondoped and doped (doping ratios of 1%, 2%, and 3% zirconium [Zr]) CuO thin films on silicon (Si) with the spin-coating technique are developed. Optical and topological characterizations of CuO thin films are examined by ultraviolet-visible and X-ray diffraction. The electrical properties of nondoped and Zr-doped CuO/Si heterojunctions are investigated with experimental current–voltage measurements in the dark and under illuminated conditions. The electrical behavior of nondoped and Zr-doped CuO/Si heterojunctions is obtained using the experimental J–V technique and computational Cheung–Cheung and Norde methods. A simulation based on nondoped and Zr-doped CuO/n-Si heterojunction solar cells using SCAPS-1D is completed. Photovoltaic (PV) parameters of experimentally produced and theoretically calculated CuO and Zr-doped CuO/Si heterojunction solar cells are compared. Accordingly, PV parameters of 1% Zr-doped CuO/Si solar cells show the highest power conversion efficiency calculated as a function of interfacial defect density and hole carrier concentration.