Temperature dependence of transport characteristics of wurtzite GaN epilayers

Erol M.

CZECHOSLOVAK JOURNAL OF PHYSICS, cilt.50, sa.5, ss.665-670, 2000 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 50 Sayı: 5
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1023/a:1022866620091
  • Dergi Adı: CZECHOSLOVAK JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.665-670
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

We report electrical transport properties of intentionally and unintentionally doped wurtzite GaN epilayers within the temperature range of 3 K up to 340 K. Specifically, temperature dependence of the carrier concentration, mobility and resistivity are investigated. Obtained data could only be explained on the basis of two-band model, namely, high mobility conduction band and low mobility impurity band. The threshold doping concentration for the dominance of the conduction band electrons is estimated to be about 10(18) cm(-3).