Photoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires

Yesilgul U., Kasapoglu E., Sari H., Sokmen I.

SOLID STATE COMMUNICATIONS, vol.151, no.17, pp.1175-1178, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 151 Issue: 17
  • Publication Date: 2011
  • Doi Number: 10.1016/j.ssc.2011.04.029
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1175-1178
  • Keywords: Quantum-well wires, Impurity, Photoionization, BAND PARAMETERS, OPTICAL GAIN, WELL WIRE, GAN, RANGE, FIELD
  • Dokuz Eylül University Affiliated: Yes

Abstract

We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy. (C) 2011 Elsevier Ltd. All rights reserved.