The effect of hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wire under the electric field


Kasapoglu E., Yesilgul U., Sari H., Sokmen I.

PHYSICA B-CONDENSED MATTER, vol.368, pp.76-81, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 368
  • Publication Date: 2005
  • Doi Number: 10.1016/j.physb.2005.06.039
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.76-81
  • Keywords: photoionization, quantum-well wires, impurity, hydrostatic pressure, SHALLOW DONOR IMPURITIES, STRONG MAGNETIC-FIELD, STRESS, GAAS, DOTS, DEPENDENCE
  • Dokuz Eylül University Affiliated: No

Abstract

Using a variational approach, we have calculated the hydrostatic pressure and electric field effects on the donor-impurity related photoionization cross-section and impurity binding energy in GaAs/GaAlAs quantum well-wires. Both the results of impurity binding energy as a function of the impurity position and photoionization cross-section for a hydrogenic donor impurity placed at the center of the quantum well-wire as a function of the normalized photon energy in the quantum well-wire under the hydrostatic pressure and electric field which are applied to the z-direction for two different wire dimensions are presented. (c) 2005 Elsevier B.V. All rights reserved.