JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, cilt.19, sa.7, ss.4167-4171, 2019 (SCI-Expanded)
In the present work, the effect of non-resonant intense laser field on the nonlinear optical rectification and second and third harmonic generation of n-type double delta-doped GaAs quantum well is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the coefficients of nonlinear optical rectification and second and third harmonic generation are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of non-resonant intense laser field. The results show that the coefficients of nonlinear optical rectification and second and third harmonic generation are strongly affected by the non-resonant intense laser field.