The effect of nitrogen on the diamagnetic susceptibility of a donor in GaxIn1-xNyAs1-y/GaAs quantum well under the magnetic field

Kilicarslan E., Sakiroglu S., Kasapoglu E., Sari H., Sokmen I.

SUPERLATTICES AND MICROSTRUCTURES, vol.48, no.3, pp.305-311, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 48 Issue: 3
  • Publication Date: 2010
  • Doi Number: 10.1016/j.spmi.2010.06.017
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.305-311
  • Keywords: Quantum well, Impurity binding energy, Magnetic field, Diamagnetic susceptibility, GAINNAS, 1.3-MU-M, LASERS, OPERATION, EMISSION
  • Dokuz Eylül University Affiliated: Yes


The binding energy and diamagnetic susceptibility of a hydrogenic donor in a GaxIn1-xNyAs1-y/GaAs quantum well has investigated in the presence of the magnetic field by using a trial wave function in the framework of the effective mass approximation. The results show that the diamagnetic susceptibility and binding energy of the donor in the GaxIn1-xNyAs1-y/GaAs quantum well increases with nitrogen mole fraction. Also, we concluded that the incorporation of several percent of nitrogen in GaxIn1-xAs alloy causes a larger band gap difference between the well and barrier and therefore deeper quantum well, resulting in the stronger confinement of the donor electron and hence the smaller separation between the electron and impurity atom. (C) 2010 Elsevier Ltd. All rights reserved.