Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells

Ungan F., Yesilgul U., Sakiroglu S., Kasapoglu E., Sari H., Sokmen I.

PHYSICS LETTERS A, vol.374, no.29, pp.2980-2984, 2010 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 374 Issue: 29
  • Publication Date: 2010
  • Doi Number: 10.1016/j.physleta.2010.05.020
  • Journal Name: PHYSICS LETTERS A
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2980-2984
  • Keywords: Intense laser field, Intersubband transitions, Impurity binding energy
  • Dokuz Eylül University Affiliated: Yes

Abstract

Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons. (C) 2010 Elsevier B.V. All rights reserved.