Hydrogenic impurities in quantum dots under intense high-frequency laser field

Yesilgul U., Sakiroglu S., Kasapoglu E., Sari H., Soekmen I.

PHYSICA B-CONDENSED MATTER, vol.406, no.8, pp.1441-1444, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 406 Issue: 8
  • Publication Date: 2011
  • Doi Number: 10.1016/j.physb.2011.01.045
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1441-1444
  • Keywords: Photoionizaton, Quantum dot, Impurity, Intense laser field, CARRIER MAGNETIC SEMICONDUCTORS, SHALLOW DONOR IMPURITIES, LO-PHONON INSTABILITY, WELL WIRES, RADIATION-FIELDS, PHOTOIONIZATION, ABSORPTION, ENERGY, ATOM
  • Dokuz Eylül University Affiliated: Yes

Abstract

The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant. (C) 2011 Elsevier B.V. All rights reserved.