JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, cilt.24, sa.3, ss.1317-1325, 2021 (ESCI)
Indium Gallium Zinc Oxide (InGaZnO4, IGZO) material, which shows high electron mobility, low threshold voltage and transparent after coating, has been used with increasing acceleration in screen technologies. In this study, IGZO nanoparticles were successfully produced using the sol-gel method. The synthesized powders were calcined at 1100 and 1250 degrees C. Similarly, pellets produced from powders were heat treated at different sintering temperatures. Surface morphology and particle size, crystal and phase structure, chemical composition and thermal behavior of synthesized particles and pellets were carried out by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Differential Thermal Analysis-Thermogravimetric analysis (DTA-TGA), respectively. As a result of phase analysis, completely crystalline InGaZnO4 phase was obtained. The relative density of IGZO pellets sintered at 1300 degrees C for 12 hours was 93% and it showed highly IGZO crystalline structure and the large. IGZO particles and pellets developed in my study have the potential for high-quality target materials used in the application of electronic devices.