Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field

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Sakiroglu S., Yesilgul U., Ungan F., Duque C. A., Kasapoglu E., Sari H., ...Daha Fazla

JOURNAL OF LUMINESCENCE, cilt.132, sa.6, ss.1584-1588, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 132 Sayı: 6
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.jlumin.2012.01.060
  • Dergi Adı: JOURNAL OF LUMINESCENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1584-1588
  • Anahtar Kelimeler: Superlattices, Intense laser fields, Laser-dressed potential, OPTICAL-ABSORPTION SPECTRA, QUANTUM-WELLS, SEMICONDUCTOR SUPERLATTICES, BINDING-ENERGY, IMPURITIES, TRANSITIONS, SINGLE, SUPPRESSION, RADIATION, EXCITONS
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states. (C) 2012 Elsevier B.V. All rights reserved.