Binding energy and optical absorption of donor impurity states in "12-6" tuned GaAs/GaAlAs double quantum well under the external fields

Kasapoglu E., Sakiroglu S., Sari H., Sokmen I., Duque C. A.

PHYSICA B-CONDENSED MATTER, vol.554, pp.72-78, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 554
  • Publication Date: 2019
  • Doi Number: 10.1016/j.physb.2018.11.006
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.72-78
  • Keywords: Double quantum well, Absorption coefficient, Donor impurity, Electric and magnetic field, HYDROSTATIC-PRESSURE, LASER FIELD, COEFFICIENTS, RECTIFICATION, TEMPERATURE, SINGLE, DOTS
  • Dokuz Eylül University Affiliated: Yes

Abstract

We have investigated the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s -> 2s absorption coefficient, including the first and third order corrections, in "12-6" tuned GaAs/GaAlAs double quantum well as a function of the impurity position, size of the structure, and the electric and magnetic field intensities. The obtained results show that the electronic and optical properties of tuned GaAs/GaAlAs double quantum well can be adjustable by an appropriate choice of the sample geometry, material parameters and applied external fields which will lead to new potential applications in optoelectronics.