Device performance optimization of CdTe/CdS thin-film solar cells through SCAPS-1D modeling using experimentally determined thin-film parameters
Materials Today Communications, cilt.56, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 56
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.mtcomm.2026.116261
- Dergi Adı: Materials Today Communications
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
- Anahtar Kelimeler: CdS, CdTe, SCAPS-1D, Simulation, Solar cell, Thin film
- Dokuz Eylül Üniversitesi Adresli: Evet
Özet
This study presents an experimentally guided numerical investigation of a Carbon/CdTe/CdS/i-ZnO/AZO thin-film solar cell using SCAPS-1D, where experimentally determined properties of CdTe and CdS thin films were incorporated into the device model. The CdTe absorber and CdS buffer layers exhibited optical band gaps of 1.37 and 2.40 eV, respectively. The photovoltaic response of the device was systematically evaluated as a function of absorber acceptor density, buffer donor density, bulk and interface defect densities, electron affinity, radiative and Auger recombination, series and shunt resistances, back-contact work function, surface recombination velocity, and operating temperature. The results revealed that the CdTe/CdS interface defect density is one of the most influential parameters governing device performance, owing to its pronounced effect on recombination and carrier collection. Appropriate doping levels and favorable band alignment enhanced the built-in electric field and charge separation, whereas increased defect density and recombination losses considerably deteriorated the photovoltaic response. A moderate (spiked) conduction band offset of approximately + 0.30 eV was obtained at the CdTe/CdS interface, which is providing favorable conditions for both carrier selectivity and suppression of interfacial recombination. Under the optimized conditions of the simulation, the device has achieved a power conversion efficiency of 14.80%; with an open-circuit voltage of 0.799 V, a short-circuit current density of 22.87 mA cm⁻², and also a fill factor of 81.01%. Moreover, C-V and Mott-Schottky analyses provided us an insight into the effects of doping concentration on junction capacitance, built-in potential, and space-charge behavior. Overall, these findings demonstrate that experimentally supported numerical modeling can effectively identify the dominant loss mechanisms in CdTe/CdS heterojunction micro structures and provide physically relevant guidelines for the design and optimization of thin film photovoltaic devices.