Novel High Sensitivity EUV Photoresist for Sub-7 nm Node

Nagai, Tomoki; Nakagawa, Hisashi; Naruoka, Takehiko; Dei, Satoshi; Tagawa, Seiichi; Oshima, Akihiro; Nagahara, Seiji; Shiraishi, Gosuke; Yoshihara, Kosuke; Terashita, Yuichi; Minekawa, Yukie; Buitrago, Elizabeth; Ekinci, Yasin; Yildirim, OKTAY; Meeuwissen, Marieke; Hoefnagels, Rik; Rispens, Gijsbert; Verspaget, Coen; Maas, Raymond

doi:10.2494/photopolymer.29.475

Novel High Sensitivity EUV Photoresist for Sub-7 nm Node

Nagai T., Nakagawa H., Naruoka T., Dei S., Tagawa S., Oshima A., ...More

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol.29, no.3, pp.475-478, 2016 (SCI-Expanded, Scopus)

Publication Type: Article / Article
Volume: 29 Issue: 3
Publication Date: 2016
Doi Number: 10.2494/photopolymer.29.475
Journal Name: JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.475-478
Keywords: EUV, 14 nm HP, 7 nm node, resolution, sensitivity, CAR
Dokuz Eylül University Affiliated: No

Abstract

Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCAR (TM) system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.