Selective oxidation of SiGe alloys: A route to Ge-on-insulator structures with controlled biaxial strain

ÖZGÜVEN TAYFUN N., McIntyre P. C.

ELECTROCHEMICAL AND SOLID STATE LETTERS, cilt.11, sa.6, 2008 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 6
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1149/1.2896080
  • Dergi Adı: ELECTROCHEMICAL AND SOLID STATE LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Dokuz Eylül Üniversitesi Adresli: Hayır

Özet

We report on the effects of oxidation of a Si1-xGex film deposited onto a thin silicon-on-insulator (SOI) (100) substrate on the strain state and crystalline perfection of the resulting high-Ge content layers. During oxidation, Si atoms were selectively incorporated in the SiO2 layer and Ge atoms were concentrated between the top and buried oxides. We found that it is possible to retain the initial in-plane lattice spacing of silicon-germanium-on-insulator layer with final Ge compositions of about 60 atomic %, indicating the buried oxide layer surface retains a "memory" of the in-plane lattice spacing of the original SOI layer. Strain control mechanisms and the conditions required to maintain the initial in-plane lattice spacing of these films are discussed.