Intersubband optical absorption in (In,Ga)N/GaN double quantum wells considering applied electric field effects

En-nadir R., El Ghazi H., Jorio A., Zorkani I., KILIÇ H. Ş.

Journal of Computational Electronics, cilt.21, sa.1, ss.111-118, 2022 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 21 Sayı: 1
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10825-021-01830-4
  • Dergi Adı: Journal of Computational Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Compendex, INSPEC
  • Sayfa Sayıları: ss.111-118
  • Anahtar Kelimeler: Double quantum wells, Electrical field, InGaN, Optical absorption
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

In the present paper, we theoretically examine the total absorption coefficient related to inter-conduction subband 1S–2P transitions in symmetric InGaN/GaN double quantum wells within the effective mass and parabolic band approximations, focusing on the impact of the structure size, chemical composition, impurity position, and external applied electric field. The eigenvalues and corresponding eigenfunctions are calculated numerically by solving the one-dimensional Schrödinger equation using the finite difference method. The calculations are made considering a finite potential barrier and dielectric and effective mass mismatches between the wells and barriers. The results show that the position and height of the resonant optical absorption peak are very sensitive and can be adjusted by an appropriate choice of applied electric field, indium composition, impurity, and structure size, opening a new avenue for high-performance optical modulators and various infrared optical device applications.