EMISSION AND ABSORPTION OF PHONONS BY THE 2-DIMENSIONAL ELECTRON-GAS IN A GAAS MODFET STRUCTURE

WIGMORE J., EROL M., SAHRAOUITAHAR M., WILKINSON C., DAVIES J., STANLEY C.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.6, sa.9, ss.837-840, 1991 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 6 Sayı: 9
  • Basım Tarihi: 1991
  • Doi Numarası: 10.1088/0268-1242/6/9/001
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.837-840
  • Dokuz Eylül Üniversitesi Adresli: Hayır

Özet

We have observed both emission and absorption of phonons by the two-dimensional electron gas in a GaAs modulation-doped field effect transistor (MODFET). For the first time in this system directly emitted LA phonons were seen, in addition to the TA products of LO down-conversion. The angular dependence of the LA feature suggested that its origin was piezoelectric not deformation potential coupling. Direct absorption of phonons by the 2DEG was found to have a response time approximately ns, so that the transmission stop bands of a superlattice phonon filter could be used as a dispersive spectrometer.