Novel high sensitivity EUV photoresist for sub-7 nm node

Nagai T., Nakagawa H., Naruoka T., Tagawa S., Oshima A., Nagahara S., ...More

Conference on Advances in Patterning Materials and Processes XXXIII, San-Jose, Costa Rica, 22 - 25 February 2016, vol.9779, (Full Text) identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 9779
  • Doi Number: 10.1117/12.2218936
  • City: San-Jose
  • Country: Costa Rica
  • Keywords: EUV, 14 nm HP, 7 nm node, resolution, sensitivity, CAR
  • Dokuz Eylül University Affiliated: No

Abstract

Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.