Effects of parasitic elements in operational transconductance amplifier AM modulator

Nacaroglu, A; Tohumoglu, GÜLAY

doi:10.1016/s0016-0032(96)00105-6

Effects of parasitic elements in operational transconductance amplifier AM modulator

Atıf İçin Kopyala

Nacaroglu A., Tohumoglu G.

JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS, cilt.334B, sa.4, ss.507-514, 1997 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 334B Sayı: 4
Basım Tarihi: 1997
Doi Numarası: 10.1016/s0016-0032(96)00105-6
Dergi Adı: JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.507-514
Dokuz Eylül Üniversitesi Adresli: Hayır

Özet

On the basis of spectral domain analysis a general method is described for the calculation of the noise effects of the parasitic elements in operational transconductance amplifier amplitude modulator. Parasitic elements are determined as a function of the controlling current of the operational transconductance amplifier. Output voltage waveform which is the AM modulated signal is derived in terms of the circuit parameters, and signal and noise powers are calculated. (C) 1997 The Franklin Institute.