Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well


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UNGAN F., YEŞİLGÜL Ü., ŞAKİROĞLU S., KASAPOĞLU E., EROL A., Arikan M. C., ...More

NANOSCALE RESEARCH LETTERS, vol.7, 2012 (SCI-Expanded) identifier identifier identifier

  • Publication Type: Article / Review
  • Volume: 7
  • Publication Date: 2012
  • Doi Number: 10.1186/1556-276x-7-606
  • Journal Name: NANOSCALE RESEARCH LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Keywords: Double quantum well, Intense laser field, Dilute nitride, IMPURITY BINDING-ENERGY, SEMICONDUCTOR MICROCAVITIES, GAINNAS, TEMPERATURE, TRANSITIONS, DISTORTION, DIODE
  • Dokuz Eylül University Affiliated: Yes

Abstract

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.