Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

Kumar M., Noh Y., Polat K., OKYAY A. K., Lee D.

SOLID STATE COMMUNICATIONS, vol.224, pp.37-40, 2015 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 224
  • Publication Date: 2015
  • Doi Number: 10.1016/j.ssc.2015.10.007
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.37-40
  • Keywords: Ga doped ZnO, Graphene, Metal-semiconductor-metal, Surface plasmon
  • Dokuz Eylül University Affiliated: No

Abstract

Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer. (C) 2015 Elsevier Ltd. All rights reserved.