Electron-related nonlinearities in GaAs-Ga1-xAlxAs double quantum wells under the effects of intense laser field and applied electric field
JOURNAL OF LUMINESCENCE, vol.135, pp.301-311, 2013 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 135
- Publication Date: 2013
- Doi Number: 10.1016/j.jlumin.2012.09.025
- Journal Name: JOURNAL OF LUMINESCENCE
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.301-311
- Keywords: Double quantum well, Intense laser field, Nonlinear optics, Electric field
- Dokuz Eylül University Affiliated: Yes
Abstract
The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. (c) 2012 Elsevier B.V. All rights reserved.