A simple method to determine carrier concentration dependence of mobility in a GaAs Modfet structure
Turkish Journal of Physics, cilt.20, sa.3, ss.263-268, 1996 (SCI-Expanded, Scopus, TRDizin)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 20 Sayı: 3
- Basım Tarihi: 1996
- Dergi Adı: Turkish Journal of Physics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
- Sayfa Sayıları: ss.263-268
- Dokuz Eylül Üniversitesi Adresli: Evet
Özet
A simple method of determining the relation between the sheet carrier concentration, ns, and the drift mobility, μ, of the two- dimensional electron gas (2DEG) in a Modulation Doped Field Effect Transistor (MODFET), is reported. The method is valid within the regime where the well-known charge control model is obeyed. The relation between μ and ns is found to be obeying the power law of μ α n0.7s at a temperature of 4.2 K for a 20nm thick spacer layered MODFET.