Synthesis and characterization of semiconductor tin oxide thin films on glass substrate by sol-gel technique

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Atıf İçin Kopyala

Culha O., EBEOĞLUGİL M. F., Birlik I., Celik E., Toparli M.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, cilt.51, sa.1, ss.32-41, 2009 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 51 Sayı: 1
• Basım Tarihi: 2009
• Doi Numarası: 10.1007/s10971-009-1956-8
• Dergi Adı: JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.32-41
• Anahtar Kelimeler: Semiconductors, Sol-gel synthesis, X-ray diffraction, Electrochemical reactions, Thermal analysis, ZRO2 INSULATION COATINGS, GAS SENSOR, SENSING CHARACTERISTICS, BUFFER LAYERS, NO2 DETECTION, PALLADIUM, CO, OPTIMIZATION, CALCINATION, GROWTH
• Dokuz Eylül Üniversitesi Adresli: Evet

Özet

In this study, synthesis and characterization of semiconductor tin oxide (SnO2) thin films on glass substrate were systematically investigated by using sol-gel technique for gas sensing applications. Turbidity, pH values, wettability and rheological properties of solution were measured by turbidimeter, pH meter, contact angle goniometer and rheometer machines before coating process. The thermal, structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using DTA-TG, FT-IR, XRD, SEM-EDS, refractometer and spectrophotometer. Four different solutions, including 6, 8, 10 and 14 mL methanol content, were prepared by sol-gel technique to determine solvent influence on microstructure and semiconducting properties of the thin films. Refractive indiceses, band gaps, absorbance and transmittance values of SnO2 thin films, containing different methanol quantity, were determined and their variations depending on solvent content were obtained. It is concluded that solvent content influences microstructural and semiconducting properties of Sn based oxide thin films notably.