Temperature dependence of transport characteristics of wurtzite GaN epilayers

Erol M.

CZECHOSLOVAK JOURNAL OF PHYSICS, vol.50, no.5, pp.665-670, 2000 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 50 Issue: 5
  • Publication Date: 2000
  • Doi Number: 10.1023/a:1022866620091
  • Journal Name: CZECHOSLOVAK JOURNAL OF PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.665-670
  • Dokuz Eylül University Affiliated: Yes

Abstract

We report electrical transport properties of intentionally and unintentionally doped wurtzite GaN epilayers within the temperature range of 3 K up to 340 K. Specifically, temperature dependence of the carrier concentration, mobility and resistivity are investigated. Obtained data could only be explained on the basis of two-band model, namely, high mobility conduction band and low mobility impurity band. The threshold doping concentration for the dominance of the conduction band electrons is estimated to be about 10(18) cm(-3).