Effects of NiO, SnO2, and Ni-doped SnO2 semiconductor metal oxides on the oxygen sensing capacity of H2TPP


Zeyrek Ongun M., Oğuzlar S., Erol M.

ANALYTICA CHIMICA ACTA, cilt.1229, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 1229
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.aca.2022.340387
  • Dergi Adı: ANALYTICA CHIMICA ACTA
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Aqualine, Aquatic Science & Fisheries Abstracts (ASFA), Artic & Antarctic Regions, BIOSIS, Biotechnology Research Abstracts, CAB Abstracts, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, EMBASE, Food Science & Technology Abstracts, MEDLINE, Metadex, Pollution Abstracts, Veterinary Science Database, Civil Engineering Abstracts
  • Anahtar Kelimeler: H2TPP, NiO, SnO2, Ni/Oxygen sensor, SENSORS, FLUORESCENCE, SENSITIVITY, LIFETIME, FILMS, NANOPARTICLES, NANOFIBERS, COMPLEX, DESIGN, PD(II)
  • Dokuz Eylül Üniversitesi Adresli: Evet

Özet

Improving the performance of optical oxygen sensors can be accomplished by adding metal oxide semi-conductors (MOSs) additives to the composition comprising an oxygen-sensing agent immobilized in a polymeric thin film. For several decades, MOSs have attracted great interest in gas sensors due to their high sensitivity to many target gasses. Herein, meso-tetraphenylporphyrin (H2TPP) dye was immobilized into the poly(1-trimethylsilyl-1-propyne) (poly(TMSP)) silicone rubber in the presence of NiO, SnO2, Ni:SnO2 metal oxide particles as additives, and their thin films were prepared to investigate oxygen-sensitive optical chemical sensor properties. The characterizations of the synthesized metal oxide powders were carried out through XPS, XRD, FT-IR, PL spectroscopy and SEM methods. Intensity-based spectra and decay kinetics of H2TPP-based thin films were investigated for the concentration range of 0%-100% [O-2]. The oxygen sensitivity (I0/I100) of the porphyrin was calculated as 70%. Whereas the relative signal intensity values of H2TPP-based sensor slides were measured as 75%, 80%, and 88% in the presence of NiO, SnO2, Ni:SnO2 additives, respectively. The H2TPP in combination with Ni:SnO2 semiconductor provided a higher I0/I100 value, larger response range, higher Stern-Volmer constant (KSV) value, and faster response time compared to the undoped form, and also NiO and SnO2 additive-doped forms of H2TPP. The response and the recovery times of the porphyrin-based sensing slide along with Ni:SnO2 additives have been measured as 12 and 50 s. These results make the H2TPP along with the MOSs promising candidates as oxygen probes.