EMISSION AND ABSORPTION OF PHONONS BY THE 2-DIMENSIONAL ELECTRON-GAS IN A GAAS MODFET STRUCTURE

---

Copy For Citation

WIGMORE J., EROL M., SAHRAOUITAHAR M., WILKINSON C., DAVIES J., STANLEY C.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.6, no.9, pp.837-840, 1991 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 6 Issue: 9
• Publication Date: 1991
• Doi Number: 10.1088/0268-1242/6/9/001
• Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.837-840
• Dokuz Eylül University Affiliated: No

Abstract

We have observed both emission and absorption of phonons by the two-dimensional electron gas in a GaAs modulation-doped field effect transistor (MODFET). For the first time in this system directly emitted LA phonons were seen, in addition to the TA products of LO down-conversion. The angular dependence of the LA feature suggested that its origin was piezoelectric not deformation potential coupling. Direct absorption of phonons by the 2DEG was found to have a response time approximately ns, so that the transmission stop bands of a superlattice phonon filter could be used as a dispersive spectrometer.