A simple method to determine carrier concentration dependence of mobility in a GaAs Modfet structure

EROL M.

Turkish Journal of Physics, vol.20, no.3, pp.263-268, 1996 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 20 Issue: 3
  • Publication Date: 1996
  • Journal Name: Turkish Journal of Physics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
  • Page Numbers: pp.263-268
  • Dokuz Eylül University Affiliated: Yes

Abstract

A simple method of determining the relation between the sheet carrier concentration, ns, and the drift mobility, μ, of the two- dimensional electron gas (2DEG) in a Modulation Doped Field Effect Transistor (MODFET), is reported. The method is valid within the regime where the well-known charge control model is obeyed. The relation between μ and ns is found to be obeying the power law of μ α n0.7s at a temperature of 4.2 K for a 20nm thick spacer layered MODFET.