Effect of carrier concentration dependant mobility on the performance of high electron mobility transistors

EROL M.

Turkish Journal of Physics, vol.25, no.2, pp.137-142, 2001 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 25 Issue: 2
  • Publication Date: 2001
  • Journal Name: Turkish Journal of Physics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
  • Page Numbers: pp.137-142
  • Dokuz Eylül University Affiliated: Yes

Abstract

The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes into account both the drift and diffusion part of the overall drain current. The normalized drain current and normalized transconductance are found to be greatly affected by the carrier concentration dependant mobility.