Ungan, F. Et Al. 2011. The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well. EUROPEAN PHYSICAL JOURNAL B , vol.80, no.1 , 89-93.

Ungan, F., Kasapoglu, E., Duque, C. A., Yesilgul, U., Sakiroglu, S., & Sokmen, I., (2011). The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well. EUROPEAN PHYSICAL JOURNAL B , vol.80, no.1, 89-93.

Ungan, F. Et Al. "The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well," EUROPEAN PHYSICAL JOURNAL B , vol.80, no.1, 89-93, 2011

Ungan, F. Et Al. "The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well." EUROPEAN PHYSICAL JOURNAL B , vol.80, no.1, pp.89-93, 2011

Ungan, F. Et Al. (2011) . "The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well." EUROPEAN PHYSICAL JOURNAL B , vol.80, no.1, pp.89-93.

@article{article, author={F. Ungan Et Al. }, title={The effects of the intense laser field on bound states in GaxIn1-x NyAs1-y/GaAs single quantum well}, journal={EUROPEAN PHYSICAL JOURNAL B}, year=2011, pages={89-93} }