Ungan, F. Et Al. 2013. Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field. JOURNAL OF LUMINESCENCE , vol.134 , 208-212.

Ungan, F., Sakiroglu, S., Yesilgul, U., EROL, A., Kasapoglu, E., Sari, H., ... Sokmen, I.(2013). Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field. JOURNAL OF LUMINESCENCE , vol.134, 208-212.

Ungan, F. Et Al. "Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field," JOURNAL OF LUMINESCENCE , vol.134, 208-212, 2013

Ungan, F. Et Al. "Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field." JOURNAL OF LUMINESCENCE , vol.134, pp.208-212, 2013

Ungan, F. Et Al. (2013) . "Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field." JOURNAL OF LUMINESCENCE , vol.134, pp.208-212.

@article{article, author={F. Ungan Et Al. }, title={Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field}, journal={JOURNAL OF LUMINESCENCE}, year=2013, pages={208-212} }